Vishay Siliconix - SI9933CDY-T1-E3

KEY Part #: K6522942

SI9933CDY-T1-E3 Pricing (USD) [344842pcs Stock]

  • 1 pcs$0.10726
  • 2,500 pcs$0.10093

Part Number:
SI9933CDY-T1-E3
Manufacturer:
Vishay Siliconix
Detailed description:
MOSFET 2P-CH 20V 4A 8SOIC.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - DIACs, SIDACs, Transistors - FETs, MOSFETs - Single, Thyristors - TRIACs, Diodes - RF, Transistors - IGBTs - Single, Transistors - Special Purpose, Thyristors - SCRs and Diodes - Bridge Rectifiers ...
Competitive Advantage:
We specialize in Vishay Siliconix SI9933CDY-T1-E3 electronic components. SI9933CDY-T1-E3 can be shipped within 24 hours after order. If you have any demands for SI9933CDY-T1-E3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SI9933CDY-T1-E3 Product Attributes

Part Number : SI9933CDY-T1-E3
Manufacturer : Vishay Siliconix
Description : MOSFET 2P-CH 20V 4A 8SOIC
Series : TrenchFET®
Part Status : Active
FET Type : 2 P-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 4A
Rds On (Max) @ Id, Vgs : 58 mOhm @ 4.8A, 4.5V
Vgs(th) (Max) @ Id : 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 26nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 665pF @ 10V
Power - Max : 3.1W
Operating Temperature : -50°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO

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