Vishay Semiconductor Diodes Division - BAV19-TR

KEY Part #: K6455927

BAV19-TR Pricing (USD) [4250974pcs Stock]

  • 1 pcs$0.00918
  • 10,000 pcs$0.00914
  • 30,000 pcs$0.00822
  • 50,000 pcs$0.00731
  • 100,000 pcs$0.00685
  • 250,000 pcs$0.00609

Part Number:
BAV19-TR
Manufacturer:
Vishay Semiconductor Diodes Division
Detailed description:
DIODE GEN PURP 100V 250MA DO35. Diodes - General Purpose, Power, Switching 120 Volt 625mA
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - Single, Transistors - IGBTs - Single, Transistors - Special Purpose, Diodes - Rectifiers - Single, Thyristors - SCRs - Modules, Transistors - Bipolar (BJT) - RF, Diodes - Bridge Rectifiers and Diodes - Zener - Arrays ...
Competitive Advantage:
We specialize in Vishay Semiconductor Diodes Division BAV19-TR electronic components. BAV19-TR can be shipped within 24 hours after order. If you have any demands for BAV19-TR, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BAV19-TR Product Attributes

Part Number : BAV19-TR
Manufacturer : Vishay Semiconductor Diodes Division
Description : DIODE GEN PURP 100V 250MA DO35
Series : Automotive, AEC-Q101
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 100V
Current - Average Rectified (Io) : 250mA (DC)
Voltage - Forward (Vf) (Max) @ If : 1V @ 100mA
Speed : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 50ns
Current - Reverse Leakage @ Vr : 100nA @ 100V
Capacitance @ Vr, F : 1.5pF @ 0V, 1MHz
Mounting Type : Through Hole
Package / Case : DO-204AH, DO-35, Axial
Supplier Device Package : DO-35
Operating Temperature - Junction : 175°C (Max)

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