IXTH6N100D2 Pricing (USD) [14843pcs Stock]
- 1 pcs$3.05405
- 10 pcs$2.74865
- 100 pcs$2.26000
- 500 pcs$1.89351
- 1,000 pcs$1.64919
- Part Number:
- IXTH6N100D2
- Manufacturer:
- IXYS
- Detailed description:
- MOSFET N-CH 1000V 6A TO247.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - DIACs, SIDACs, Transistors - Bipolar (BJT) - Arrays, Diodes - Rectifiers - Single, Power Driver Modules, Transistors - IGBTs - Arrays, Diodes - Bridge Rectifiers, Transistors - Bipolar (BJT) - Single, Pre-Biased and Transistors - Bipolar (BJT) - RF ...
- Competitive Advantage:
- We specialize in IXYS IXTH6N100D2 electronic components. IXTH6N100D2 can be shipped within 24 hours after order. If you have any demands for IXTH6N100D2, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTH6N100D2 Product Attributes
Part Number :
IXTH6N100D2
Manufacturer :
IXYS
Description :
MOSFET N-CH 1000V 6A TO247
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
1000V
Current - Continuous Drain (Id) @ 25°C :
6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
-
Rds On (Max) @ Id, Vgs :
2.2 Ohm @ 3A, 0V
Vgs(th) (Max) @ Id :
-
Gate Charge (Qg) (Max) @ Vgs :
95nC @ 5V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
2650pF @ 25V
FET Feature :
Depletion Mode
Power Dissipation (Max) :
300W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-247 (IXTH)
Package / Case :
TO-247-3
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