IXYS - IXFN32N120P

KEY Part #: K6394837

IXFN32N120P Pricing (USD) [1806pcs Stock]

  • 1 pcs$25.30626
  • 10 pcs$25.18035

Part Number:
IXFN32N120P
Manufacturer:
IXYS
Detailed description:
MOSFET N-CH 1200V 32A SOT-227B.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - TRIACs, Transistors - JFETs, Thyristors - SCRs, Transistors - IGBTs - Arrays, Transistors - IGBTs - Single, Power Driver Modules, Diodes - Variable Capacitance (Varicaps, Varactors) and Transistors - Bipolar (BJT) - RF ...
Competitive Advantage:
We specialize in IXYS IXFN32N120P electronic components. IXFN32N120P can be shipped within 24 hours after order. If you have any demands for IXFN32N120P, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXFN32N120P Product Attributes

Part Number : IXFN32N120P
Manufacturer : IXYS
Description : MOSFET N-CH 1200V 32A SOT-227B
Series : Polar™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 1200V
Current - Continuous Drain (Id) @ 25°C : 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 310 mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id : 6.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 360nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 21000pF @ 25V
FET Feature : -
Power Dissipation (Max) : 1000W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Chassis Mount
Supplier Device Package : SOT-227B
Package / Case : SOT-227-4, miniBLOC