SSM3J356R,LF Pricing (USD) [1082173pcs Stock]
- 1 pcs$0.03778
- 3,000 pcs$0.03760
- Part Number:
- SSM3J356R,LF
- Manufacturer:
- Toshiba Semiconductor and Storage
- Detailed description:
- MOSFET P-CH 60V 2A SOT-23F.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - Single, Transistors - Bipolar (BJT) - RF, Thyristors - SCRs - Modules, Transistors - IGBTs - Single, Transistors - JFETs, Transistors - FETs, MOSFETs - Arrays, Thyristors - SCRs and Transistors - FETs, MOSFETs - RF ...
- Competitive Advantage:
- We specialize in Toshiba Semiconductor and Storage SSM3J356R,LF electronic components. SSM3J356R,LF can be shipped within 24 hours after order. If you have any demands for SSM3J356R,LF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SSM3J356R,LF Product Attributes
Part Number :
SSM3J356R,LF
Manufacturer :
Toshiba Semiconductor and Storage
Description :
MOSFET P-CH 60V 2A SOT-23F
Series :
U-MOSVI
Part Status :
Active
FET Type :
P-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
60V
Current - Continuous Drain (Id) @ 25°C :
2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
4V, 10V
Rds On (Max) @ Id, Vgs :
300 mOhm @ 1A, 10V
Vgs(th) (Max) @ Id :
2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
8.3nC @ 10V
Vgs (Max) :
+10V, -20V
Input Capacitance (Ciss) (Max) @ Vds :
330pF @ 10V
FET Feature :
-
Power Dissipation (Max) :
1W (Ta)
Operating Temperature :
150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
SOT-23F
Package / Case :
SOT-23-3 Flat Leads
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