Vishay Siliconix - IRFBC20LPBF

KEY Part #: K6411897

[13632pcs Stock]


    Part Number:
    IRFBC20LPBF
    Manufacturer:
    Vishay Siliconix
    Detailed description:
    MOSFET N-CH 600V 2.2A TO-262.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Modules, Transistors - Bipolar (BJT) - RF, Diodes - Rectifiers - Single, Power Driver Modules, Transistors - IGBTs - Single, Diodes - RF, Thyristors - DIACs, SIDACs and Transistors - Bipolar (BJT) - Arrays, Pre-Biased ...
    Competitive Advantage:
    We specialize in Vishay Siliconix IRFBC20LPBF electronic components. IRFBC20LPBF can be shipped within 24 hours after order. If you have any demands for IRFBC20LPBF, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    IRFBC20LPBF Product Attributes

    Part Number : IRFBC20LPBF
    Manufacturer : Vishay Siliconix
    Description : MOSFET N-CH 600V 2.2A TO-262
    Series : -
    Part Status : Obsolete
    FET Type : N-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 600V
    Current - Continuous Drain (Id) @ 25°C : 2.2A (Tc)
    Drive Voltage (Max Rds On, Min Rds On) : 10V
    Rds On (Max) @ Id, Vgs : 4.4 Ohm @ 1.3A, 10V
    Vgs(th) (Max) @ Id : 4V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs : 18nC @ 10V
    Vgs (Max) : ±20V
    Input Capacitance (Ciss) (Max) @ Vds : 350pF @ 25V
    FET Feature : -
    Power Dissipation (Max) : 3.1W (Ta), 50W (Tc)
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Through Hole
    Supplier Device Package : TO-262-3
    Package / Case : TO-262-3 Long Leads, I²Pak, TO-262AA

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