Toshiba Semiconductor and Storage - RN2605(TE85L,F)

KEY Part #: K6529173

RN2605(TE85L,F) Pricing (USD) [1060332pcs Stock]

  • 1 pcs$0.03488

Part Number:
RN2605(TE85L,F)
Manufacturer:
Toshiba Semiconductor and Storage
Detailed description:
TRANS 2PNP PREBIAS 0.3W SM6.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - Single, Transistors - FETs, MOSFETs - Arrays, Thyristors - SCRs, Power Driver Modules, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - JFETs, Transistors - FETs, MOSFETs - RF and Thyristors - SCRs - Modules ...
Competitive Advantage:
We specialize in Toshiba Semiconductor and Storage RN2605(TE85L,F) electronic components. RN2605(TE85L,F) can be shipped within 24 hours after order. If you have any demands for RN2605(TE85L,F), Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

RN2605(TE85L,F) Product Attributes

Part Number : RN2605(TE85L,F)
Manufacturer : Toshiba Semiconductor and Storage
Description : TRANS 2PNP PREBIAS 0.3W SM6
Series : -
Part Status : Active
Transistor Type : 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 2.2 kOhms
Resistor - Emitter Base (R2) : 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
Frequency - Transition : 200MHz
Power - Max : 300mW
Mounting Type : Surface Mount
Package / Case : SC-74, SOT-457
Supplier Device Package : SM6

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