[12822pcs Stock]
- Part Number:
- PMV56XN,215
- Manufacturer:
- NXP USA Inc.
- Detailed description:
- MOSFET N-CH 20V 3.76A SOT23.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - RF, Transistors - Programmable Unijunction, Thyristors - SCRs - Modules, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - Special Purpose, Diodes - Rectifiers - Single and Diodes - Zener - Single ...
- Competitive Advantage:
- We specialize in NXP USA Inc. PMV56XN,215 electronic components. PMV56XN,215 can be shipped within 24 hours after order. If you have any demands for PMV56XN,215, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PMV56XN,215 Product Attributes
Part Number :
PMV56XN,215
Manufacturer :
NXP USA Inc.
Description :
MOSFET N-CH 20V 3.76A SOT23
Series :
TrenchMOS™
Part Status :
Obsolete
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
20V
Current - Continuous Drain (Id) @ 25°C :
3.76A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
2.5V, 4.5V
Rds On (Max) @ Id, Vgs :
85 mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id :
650mV @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
5.4nC @ 4.5V
Vgs (Max) :
±8V
Input Capacitance (Ciss) (Max) @ Vds :
230pF @ 10V
FET Feature :
-
Power Dissipation (Max) :
1.92W (Tc)
Operating Temperature :
-65°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
TO-236AB (SOT23)
Package / Case :
TO-236-3, SC-59, SOT-23-3
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