Vishay Siliconix - IRF530SPBF

KEY Part #: K6399452

IRF530SPBF Pricing (USD) [50279pcs Stock]

  • 1 pcs$0.76930
  • 10 pcs$0.68276
  • 100 pcs$0.53973
  • 500 pcs$0.41857
  • 1,000 pcs$0.31258

Part Number:
IRF530SPBF
Manufacturer:
Vishay Siliconix
Detailed description:
MOSFET N-CH 100V 14A D2PAK.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - Arrays, Thyristors - SCRs - Modules, Diodes - Zener - Single, Transistors - Bipolar (BJT) - RF, Transistors - Special Purpose, Thyristors - SCRs, Transistors - FETs, MOSFETs - RF and Diodes - Bridge Rectifiers ...
Competitive Advantage:
We specialize in Vishay Siliconix IRF530SPBF electronic components. IRF530SPBF can be shipped within 24 hours after order. If you have any demands for IRF530SPBF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRF530SPBF Product Attributes

Part Number : IRF530SPBF
Manufacturer : Vishay Siliconix
Description : MOSFET N-CH 100V 14A D2PAK
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 160 mOhm @ 8.4A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 26nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 670pF @ 25V
FET Feature : -
Power Dissipation (Max) : 3.7W (Ta), 88W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : TO-263 (D²Pak)
Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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