[1959pcs Stock]
- Part Number:
- IPB065N15N3GE8187ATMA1
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 150V 130A TO263-7.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - TRIACs, Power Driver Modules, Diodes - RF, Diodes - Rectifiers - Single, Transistors - Bipolar (BJT) - Arrays, Transistors - FETs, MOSFETs - RF, Thyristors - SCRs and Diodes - Zener - Arrays ...
- Competitive Advantage:
- We specialize in Infineon Technologies IPB065N15N3GE8187ATMA1 electronic components. IPB065N15N3GE8187ATMA1 can be shipped within 24 hours after order. If you have any demands for IPB065N15N3GE8187ATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPB065N15N3GE8187ATMA1 Product Attributes
Part Number :
IPB065N15N3GE8187ATMA1
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 150V 130A TO263-7
Series :
OptiMOS™
Part Status :
Obsolete
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
150V
Current - Continuous Drain (Id) @ 25°C :
130A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
8V, 10V
Rds On (Max) @ Id, Vgs :
6.5 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id :
4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs :
93nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
7300pF @ 75V
FET Feature :
-
Power Dissipation (Max) :
300W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
PG-TO263-7
Package / Case :
TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
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