IXYS - IXFA6N120P

KEY Part #: K6398420

IXFA6N120P Pricing (USD) [13208pcs Stock]

  • 1 pcs$3.42865
  • 10 pcs$3.08666
  • 100 pcs$2.53804
  • 500 pcs$2.12645
  • 1,000 pcs$1.85206

Part Number:
IXFA6N120P
Manufacturer:
IXYS
Detailed description:
MOSFET N-CH 1200V 6A D2PAK.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Thyristors - SCRs - Modules, Diodes - Rectifiers - Single, Diodes - Variable Capacitance (Varicaps, Varactors), Diodes - Rectifiers - Arrays, Transistors - JFETs, Transistors - IGBTs - Single and Transistors - Programmable Unijunction ...
Competitive Advantage:
We specialize in IXYS IXFA6N120P electronic components. IXFA6N120P can be shipped within 24 hours after order. If you have any demands for IXFA6N120P, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXFA6N120P Product Attributes

Part Number : IXFA6N120P
Manufacturer : IXYS
Description : MOSFET N-CH 1200V 6A D2PAK
Series : HiPerFET™, PolarP2™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 1200V
Current - Continuous Drain (Id) @ 25°C : 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 2.4 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id : 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 92nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 2830pF @ 25V
FET Feature : -
Power Dissipation (Max) : 250W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : TO-263 (IXFA)
Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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