Vishay Semiconductor Diodes Division - VBT1080S-E3/4W

KEY Part #: K6436830

VBT1080S-E3/4W Pricing (USD) [242912pcs Stock]

  • 1 pcs$0.16068
  • 2,000 pcs$0.15988

Part Number:
VBT1080S-E3/4W
Manufacturer:
Vishay Semiconductor Diodes Division
Detailed description:
DIODE SCHOTTKY 10A 80V TO-263AB.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - Single, Transistors - IGBTs - Modules, Thyristors - SCRs - Modules, Diodes - Bridge Rectifiers, Transistors - JFETs, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - FETs, MOSFETs - Arrays and Transistors - IGBTs - Single ...
Competitive Advantage:
We specialize in Vishay Semiconductor Diodes Division VBT1080S-E3/4W electronic components. VBT1080S-E3/4W can be shipped within 24 hours after order. If you have any demands for VBT1080S-E3/4W, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VBT1080S-E3/4W Product Attributes

Part Number : VBT1080S-E3/4W
Manufacturer : Vishay Semiconductor Diodes Division
Description : DIODE SCHOTTKY 10A 80V TO-263AB
Series : -
Part Status : Active
Diode Type : Schottky
Voltage - DC Reverse (Vr) (Max) : 80V
Current - Average Rectified (Io) : 10A
Voltage - Forward (Vf) (Max) @ If : 810mV @ 10A
Speed : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : -
Current - Reverse Leakage @ Vr : 600µA @ 80V
Capacitance @ Vr, F : -
Mounting Type : Surface Mount
Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package : TO-263AB
Operating Temperature - Junction : -55°C ~ 150°C

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