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  5. FDMS4D4N08C

ON Semiconductor - FDMS4D4N08C

KEY Part #: K6393827

FDMS4D4N08C Pricing (USD) [63134pcs Stock]

  • 1 pcs$0.61933
Part Number:
FDMS4D4N08C
Manufacturer:
ON Semiconductor
Detailed description:
MOSFET N-CH 80V 123A 8PQFN.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Zener - Single, Transistors - JFETs, Transistors - FETs, MOSFETs - Arrays, Transistors - IGBTs - Single, Transistors - Bipolar (BJT) - RF, Diodes - Zener - Arrays, Transistors - Bipolar (BJT) - Arrays and Diodes - RF ...
Competitive Advantage:
We specialize in ON Semiconductor FDMS4D4N08C electronic components. FDMS4D4N08C can be shipped within 24 hours after order. If you have any demands for FDMS4D4N08C, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FDMS4D4N08C Product Attributes

Part Number : FDMS4D4N08C
Manufacturer : ON Semiconductor
Description : MOSFET N-CH 80V 123A 8PQFN
Series : PowerTrench®
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 80V
Current - Continuous Drain (Id) @ 25°C : 123A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 6V, 10V
Rds On (Max) @ Id, Vgs : 4.3 mOhm @ 44A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 56nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 4090pF @ 40V
FET Feature : -
Power Dissipation (Max) : 125W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-PQFN (5x6), Power56
Package / Case : 8-PowerTDFN

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