Vishay Semiconductor Diodes Division - ESH3DHE3/9AT

KEY Part #: K6447547

[1387pcs Stock]


    Part Number:
    ESH3DHE3/9AT
    Manufacturer:
    Vishay Semiconductor Diodes Division
    Detailed description:
    DIODE GEN PURP 200V 3A DO214AB.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - RF, Transistors - FETs, MOSFETs - Single, Transistors - Bipolar (BJT) - Single, Thyristors - SCRs - Modules, Diodes - Rectifiers - Single, Diodes - Bridge Rectifiers, Transistors - Bipolar (BJT) - Arrays, Pre-Biased and Transistors - Bipolar (BJT) - Single, Pre-Biased ...
    Competitive Advantage:
    We specialize in Vishay Semiconductor Diodes Division ESH3DHE3/9AT electronic components. ESH3DHE3/9AT can be shipped within 24 hours after order. If you have any demands for ESH3DHE3/9AT, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    ESH3DHE3/9AT Product Attributes

    Part Number : ESH3DHE3/9AT
    Manufacturer : Vishay Semiconductor Diodes Division
    Description : DIODE GEN PURP 200V 3A DO214AB
    Series : -
    Part Status : Obsolete
    Diode Type : Standard
    Voltage - DC Reverse (Vr) (Max) : 200V
    Current - Average Rectified (Io) : 3A
    Voltage - Forward (Vf) (Max) @ If : 900mV @ 3A
    Speed : Fast Recovery =< 500ns, > 200mA (Io)
    Reverse Recovery Time (trr) : 40ns
    Current - Reverse Leakage @ Vr : 5µA @ 200V
    Capacitance @ Vr, F : -
    Mounting Type : Surface Mount
    Package / Case : DO-214AB, SMC
    Supplier Device Package : DO-214AB (SMC)
    Operating Temperature - Junction : -55°C ~ 175°C

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