Manufacturer :
Microsemi Corporation
Description :
MOSFET N-CH 1200V 4A TO-220
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
1200V
Current - Continuous Drain (Id) @ 25°C :
4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
4.6 Ohm @ 2A, 10V
Vgs(th) (Max) @ Id :
5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs :
43nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
1385pF @ 25V
Power Dissipation (Max) :
225W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-220
Package / Case :
TO-220-3