Vishay Semiconductor Diodes Division - VS-GT400TH60N

KEY Part #: K6533210

VS-GT400TH60N Pricing (USD) [164pcs Stock]

  • 1 pcs$281.77816
  • 12 pcs$223.00207

Part Number:
VS-GT400TH60N
Manufacturer:
Vishay Semiconductor Diodes Division
Detailed description:
IGBT 600V 530A 1600W DIAP.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - SCRs - Modules, Transistors - JFETs, Diodes - Rectifiers - Arrays, Diodes - Zener - Arrays, Diodes - Rectifiers - Single, Transistors - Programmable Unijunction, Thyristors - TRIACs and Transistors - IGBTs - Modules ...
Competitive Advantage:
We specialize in Vishay Semiconductor Diodes Division VS-GT400TH60N electronic components. VS-GT400TH60N can be shipped within 24 hours after order. If you have any demands for VS-GT400TH60N, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VS-GT400TH60N Product Attributes

Part Number : VS-GT400TH60N
Manufacturer : Vishay Semiconductor Diodes Division
Description : IGBT 600V 530A 1600W DIAP
Series : -
Part Status : Active
IGBT Type : Trench
Configuration : Half Bridge
Voltage - Collector Emitter Breakdown (Max) : 600V
Current - Collector (Ic) (Max) : 530A
Power - Max : 1600W
Vce(on) (Max) @ Vge, Ic : 2.05V @ 15V, 400A
Current - Collector Cutoff (Max) : 5mA
Input Capacitance (Cies) @ Vce : 30.8nF @ 30V
Input : Standard
NTC Thermistor : No
Operating Temperature : 175°C (TJ)
Mounting Type : Chassis Mount
Package / Case : Double INT-A-PAK (3 + 8)
Supplier Device Package : Double INT-A-PAK

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