Vishay Semiconductor Diodes Division - VB20120SG-E3/8W

KEY Part #: K6437240

VB20120SG-E3/8W Pricing (USD) [100771pcs Stock]

  • 1 pcs$0.38801
  • 800 pcs$0.34378

Part Number:
VB20120SG-E3/8W
Manufacturer:
Vishay Semiconductor Diodes Division
Detailed description:
DIODE SCHOTTKY 120V 20A TO263AB. Schottky Diodes & Rectifiers 20 Amp 120 Volt Single TrenchMOS
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - RF, Transistors - Programmable Unijunction, Transistors - IGBTs - Single, Diodes - RF, Transistors - FETs, MOSFETs - Arrays, Diodes - Rectifiers - Single, Diodes - Zener - Single and Transistors - FETs, MOSFETs - Single ...
Competitive Advantage:
We specialize in Vishay Semiconductor Diodes Division VB20120SG-E3/8W electronic components. VB20120SG-E3/8W can be shipped within 24 hours after order. If you have any demands for VB20120SG-E3/8W, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VB20120SG-E3/8W Product Attributes

Part Number : VB20120SG-E3/8W
Manufacturer : Vishay Semiconductor Diodes Division
Description : DIODE SCHOTTKY 120V 20A TO263AB
Series : TMBS®
Part Status : Active
Diode Type : Schottky
Voltage - DC Reverse (Vr) (Max) : 120V
Current - Average Rectified (Io) : 20A
Voltage - Forward (Vf) (Max) @ If : 1.33V @ 20A
Speed : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : -
Current - Reverse Leakage @ Vr : 250µA @ 120V
Capacitance @ Vr, F : -
Mounting Type : Surface Mount
Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package : TO-263AB
Operating Temperature - Junction : -40°C ~ 150°C

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