Nexperia USA Inc. - PMDPB30XN,115

KEY Part #: K6524855

PMDPB30XN,115 Pricing (USD) [503533pcs Stock]

  • 1 pcs$0.11729
  • 3,000 pcs$0.11670

Part Number:
PMDPB30XN,115
Manufacturer:
Nexperia USA Inc.
Detailed description:
MOSFET 2N-CH 20V 4A 6HUSON.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - TRIACs, Transistors - Bipolar (BJT) - Single, Diodes - Zener - Arrays, Transistors - Bipolar (BJT) - RF, Thyristors - SCRs, Thyristors - DIACs, SIDACs, Power Driver Modules and Transistors - Programmable Unijunction ...
Competitive Advantage:
We specialize in Nexperia USA Inc. PMDPB30XN,115 electronic components. PMDPB30XN,115 can be shipped within 24 hours after order. If you have any demands for PMDPB30XN,115, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

PMDPB30XN,115 Product Attributes

Part Number : PMDPB30XN,115
Manufacturer : Nexperia USA Inc.
Description : MOSFET 2N-CH 20V 4A 6HUSON
Series : -
Part Status : Active
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 4A
Rds On (Max) @ Id, Vgs : 40 mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id : 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 21.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 660pF @ 10V
Power - Max : 490mW
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 6-UDFN Exposed Pad
Supplier Device Package : 6-HUSON-EP (2x2)