Vishay Siliconix - SI2323DS-T1

KEY Part #: K6406616

[1258pcs Stock]


    Part Number:
    SI2323DS-T1
    Manufacturer:
    Vishay Siliconix
    Detailed description:
    MOSFET P-CH 20V 3.7A SOT23.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Bridge Rectifiers, Thyristors - SCRs - Modules, Thyristors - DIACs, SIDACs, Diodes - Rectifiers - Single, Transistors - Bipolar (BJT) - Arrays, Transistors - JFETs, Diodes - Zener - Single and Transistors - Bipolar (BJT) - Single ...
    Competitive Advantage:
    We specialize in Vishay Siliconix SI2323DS-T1 electronic components. SI2323DS-T1 can be shipped within 24 hours after order. If you have any demands for SI2323DS-T1, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    SI2323DS-T1 Product Attributes

    Part Number : SI2323DS-T1
    Manufacturer : Vishay Siliconix
    Description : MOSFET P-CH 20V 3.7A SOT23
    Series : TrenchFET®
    Part Status : Obsolete
    FET Type : P-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 20V
    Current - Continuous Drain (Id) @ 25°C : 3.7A (Ta)
    Drive Voltage (Max Rds On, Min Rds On) : 1.8V, 4.5V
    Rds On (Max) @ Id, Vgs : 39 mOhm @ 4.7A, 4.5V
    Vgs(th) (Max) @ Id : 1V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs : 19nC @ 4.5V
    Vgs (Max) : ±8V
    Input Capacitance (Ciss) (Max) @ Vds : 1020pF @ 10V
    FET Feature : -
    Power Dissipation (Max) : 750mW (Ta)
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Surface Mount
    Supplier Device Package : SOT-23-3 (TO-236)
    Package / Case : TO-236-3, SC-59, SOT-23-3

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