[14099pcs Stock]
- Part Number:
- HUF75829D3ST
- Manufacturer:
- ON Semiconductor
- Detailed description:
- MOSFET N-CH 150V 18A DPAK.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Single, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - Bipolar (BJT) - Single, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - FETs, MOSFETs - Arrays, Diodes - Rectifiers - Arrays and Diodes - Bridge Rectifiers ...
- Competitive Advantage:
- We specialize in ON Semiconductor HUF75829D3ST electronic components. HUF75829D3ST can be shipped within 24 hours after order. If you have any demands for HUF75829D3ST, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
HUF75829D3ST Product Attributes
Part Number :
HUF75829D3ST
Manufacturer :
ON Semiconductor
Description :
MOSFET N-CH 150V 18A DPAK
Series :
UltraFET™
Part Status :
Obsolete
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
150V
Current - Continuous Drain (Id) @ 25°C :
18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
110 mOhm @ 18A, 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
70nC @ 20V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1080pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
110W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
TO-252AA
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
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