D850N36TXPSA1 Pricing (USD) [610pcs Stock]
- 1 pcs$76.08154
- Part Number:
- D850N36TXPSA1
- Manufacturer:
- Infineon Technologies
- Detailed description:
- DIODE GEN PURP 3.6KV 850A.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Bipolar (BJT) - Single, Transistors - FETs, MOSFETs - RF, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - RF, Transistors - Special Purpose, Thyristors - DIACs, SIDACs and Power Driver Modules ...
- Competitive Advantage:
- We specialize in Infineon Technologies D850N36TXPSA1 electronic components. D850N36TXPSA1 can be shipped within 24 hours after order. If you have any demands for D850N36TXPSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
D850N36TXPSA1 Product Attributes
Part Number :
D850N36TXPSA1
Manufacturer :
Infineon Technologies
Description :
DIODE GEN PURP 3.6KV 850A
Series :
-
Part Status :
Active
Diode Type :
Standard
Voltage - DC Reverse (Vr) (Max) :
3600V
Current - Average Rectified (Io) :
850A
Voltage - Forward (Vf) (Max) @ If :
1.28V @ 850A
Speed :
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) :
-
Current - Reverse Leakage @ Vr :
50mA @ 3600V
Capacitance @ Vr, F :
-
Mounting Type :
Chassis Mount
Package / Case :
DO-200AB, B-PUK
Supplier Device Package :
-
Operating Temperature - Junction :
-40°C ~ 160°C
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