Toshiba Memory America, Inc. - TH58BYG2S3HBAI6

KEY Part #: K937444

Detailed description:: IC FLASH 4G PARALLEL 67VFBGA. NAND Flash 1.8V 4Gb 24nm SLC NAND (EEPROM)

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Part Number : TH58BYG2S3HBAI6

Manufacturer : Toshiba Memory America, Inc.

Description : IC FLASH 4G PARALLEL 67VFBGA

Series : Benand™

Part Status : Active

Memory Type : Non-Volatile

Memory Format : FLASH

Technology : FLASH - NAND (SLC)

Memory Size : 4Gb (512M x 8)

Clock Frequency : -

Write Cycle Time - Word, Page : 25ns

Access Time : 25ns

Memory Interface : Parallel

Voltage - Supply : 1.7V ~ 1.95V

Operating Temperature : -40°C ~ 85°C (TA)

Mounting Type : Surface Mount

Package / Case : 67-VFBGA

Supplier Device Package : 67-VFBGA (6.5x8)

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