IRF2804PBF Pricing (USD) [26950pcs Stock]
- 1 pcs$1.48516
- 10 pcs$1.32783
- 100 pcs$1.03296
- 500 pcs$0.83643
- 1,000 pcs$0.70543
- Part Number:
- IRF2804PBF
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 40V 75A TO-220AB.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Zener - Single, Transistors - Special Purpose, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolar (BJT) - Single, Transistors - Bipolar (BJT) - RF, Diodes - Rectifiers - Single and Diodes - Zener - Arrays ...
- Competitive Advantage:
- We specialize in Infineon Technologies IRF2804PBF electronic components. IRF2804PBF can be shipped within 24 hours after order. If you have any demands for IRF2804PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF2804PBF Product Attributes
Part Number :
IRF2804PBF
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 40V 75A TO-220AB
Series :
HEXFET®
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
40V
Current - Continuous Drain (Id) @ 25°C :
75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
2.3 mOhm @ 75A, 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
240nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
6450pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
300W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-220AB
Package / Case :
TO-220-3
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