Vishay Semiconductor Diodes Division - VS-HFA06TB120-N3

KEY Part #: K6442706

VS-HFA06TB120-N3 Pricing (USD) [3041pcs Stock]

  • 1,000 pcs$0.84035

Part Number:
VS-HFA06TB120-N3
Manufacturer:
Vishay Semiconductor Diodes Division
Detailed description:
DIODE GEN PURP 1.2KV 6A TO220AC.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolar (BJT) - RF, Transistors - Programmable Unijunction, Transistors - Bipolar (BJT) - Arrays, Thyristors - DIACs, SIDACs, Power Driver Modules, Transistors - Bipolar (BJT) - Single and Diodes - Zener - Arrays ...
Competitive Advantage:
We specialize in Vishay Semiconductor Diodes Division VS-HFA06TB120-N3 electronic components. VS-HFA06TB120-N3 can be shipped within 24 hours after order. If you have any demands for VS-HFA06TB120-N3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VS-HFA06TB120-N3 Product Attributes

Part Number : VS-HFA06TB120-N3
Manufacturer : Vishay Semiconductor Diodes Division
Description : DIODE GEN PURP 1.2KV 6A TO220AC
Series : HEXFRED®
Part Status : Obsolete
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 1200V
Current - Average Rectified (Io) : 6A
Voltage - Forward (Vf) (Max) @ If : 3V @ 6A
Speed : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 80ns
Current - Reverse Leakage @ Vr : 5µA @ 1200V
Capacitance @ Vr, F : -
Mounting Type : Through Hole
Package / Case : TO-220-2
Supplier Device Package : TO-220AC
Operating Temperature - Junction : -55°C ~ 150°C

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