SIHU5N50D-GE3 Pricing (USD) [78588pcs Stock]
- 1 pcs$0.49754
- 3,000 pcs$0.18272
- Part Number:
- SIHU5N50D-GE3
- Manufacturer:
- Vishay Siliconix
- Detailed description:
- MOSFET N-CH 500V 5.3A TO251 IPAK.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Modules, Thyristors - TRIACs, Power Driver Modules, Diodes - Zener - Single, Diodes - Bridge Rectifiers, Diodes - Zener - Arrays, Transistors - Bipolar (BJT) - Arrays, Pre-Biased and Diodes - Variable Capacitance (Varicaps, Varactors) ...
- Competitive Advantage:
- We specialize in Vishay Siliconix SIHU5N50D-GE3 electronic components. SIHU5N50D-GE3 can be shipped within 24 hours after order. If you have any demands for SIHU5N50D-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIHU5N50D-GE3 Product Attributes
Part Number :
SIHU5N50D-GE3
Manufacturer :
Vishay Siliconix
Description :
MOSFET N-CH 500V 5.3A TO251 IPAK
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
500V
Current - Continuous Drain (Id) @ 25°C :
5.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
1.5 Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id :
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
20nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
325pF @ 100V
FET Feature :
-
Power Dissipation (Max) :
104W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-251
Package / Case :
TO-251-3 Short Leads, IPak, TO-251AA
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