STD2HNK60Z-1 Pricing (USD) [68263pcs Stock]
- 1 pcs$0.57280
- 10 pcs$0.50883
- 100 pcs$0.40225
- 500 pcs$0.29510
- 1,000 pcs$0.23297
- Part Number:
- STD2HNK60Z-1
- Manufacturer:
- STMicroelectronics
- Detailed description:
- MOSFET N-CH 600V 2A IPAK.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Zener - Single, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Thyristors - DIACs, SIDACs, Transistors - Programmable Unijunction, Transistors - Bipolar (BJT) - Single, Diodes - Zener - Arrays and Transistors - IGBTs - Modules ...
- Competitive Advantage:
- We specialize in STMicroelectronics STD2HNK60Z-1 electronic components. STD2HNK60Z-1 can be shipped within 24 hours after order. If you have any demands for STD2HNK60Z-1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STD2HNK60Z-1 Product Attributes
Part Number :
STD2HNK60Z-1
Manufacturer :
STMicroelectronics
Description :
MOSFET N-CH 600V 2A IPAK
Series :
SuperMESH™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
600V
Current - Continuous Drain (Id) @ 25°C :
2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
4.8 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id :
4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs :
15nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
280pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
45W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
I-PAK
Package / Case :
TO-251-3 Short Leads, IPak, TO-251AA
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