Taiwan Semiconductor Corporation - TSM2N60ECH C5G

KEY Part #: K6405869

TSM2N60ECH C5G Pricing (USD) [116901pcs Stock]

  • 1 pcs$0.31640

Part Number:
TSM2N60ECH C5G
Manufacturer:
Taiwan Semiconductor Corporation
Detailed description:
MOSFET N-CHANNEL 600V 2A TO251.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - RF, Diodes - Zener - Arrays, Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Zener - Single, Thyristors - DIACs, SIDACs, Thyristors - SCRs, Transistors - Bipolar (BJT) - RF and Transistors - JFETs ...
Competitive Advantage:
We specialize in Taiwan Semiconductor Corporation TSM2N60ECH C5G electronic components. TSM2N60ECH C5G can be shipped within 24 hours after order. If you have any demands for TSM2N60ECH C5G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TSM2N60ECH C5G Product Attributes

Part Number : TSM2N60ECH C5G
Manufacturer : Taiwan Semiconductor Corporation
Description : MOSFET N-CHANNEL 600V 2A TO251
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 4 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id : 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 9.5nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 362pF @ 25V
FET Feature : -
Power Dissipation (Max) : 52.1W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-251 (IPAK)
Package / Case : TO-251-3 Short Leads, IPak, TO-251AA

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