Vishay Semiconductor Diodes Division - ESH2B-M3/52T

KEY Part #: K6457877

ESH2B-M3/52T Pricing (USD) [730521pcs Stock]

  • 1 pcs$0.05063
  • 12,000 pcs$0.04588

Part Number:
ESH2B-M3/52T
Manufacturer:
Vishay Semiconductor Diodes Division
Detailed description:
DIODE GEN PURP 100V 2A DO214AA. Rectifiers 2A,100V,25ns,UF Rect, SMD
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - RF, Diodes - Rectifiers - Single, Power Driver Modules, Transistors - JFETs, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - FETs, MOSFETs - Single, Transistors - Bipolar (BJT) - Arrays and Diodes - Zener - Arrays ...
Competitive Advantage:
We specialize in Vishay Semiconductor Diodes Division ESH2B-M3/52T electronic components. ESH2B-M3/52T can be shipped within 24 hours after order. If you have any demands for ESH2B-M3/52T, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

ESH2B-M3/52T Product Attributes

Part Number : ESH2B-M3/52T
Manufacturer : Vishay Semiconductor Diodes Division
Description : DIODE GEN PURP 100V 2A DO214AA
Series : -
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 100V
Current - Average Rectified (Io) : 2A
Voltage - Forward (Vf) (Max) @ If : 930mV @ 2A
Speed : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 35ns
Current - Reverse Leakage @ Vr : 2µA @ 100V
Capacitance @ Vr, F : 30pF @ 4V, 1MHz
Mounting Type : Surface Mount
Package / Case : DO-214AA, SMB
Supplier Device Package : DO-214AA (SMB)
Operating Temperature - Junction : -55°C ~ 175°C

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