IPI90R800C3XKSA1 Pricing (USD) [1063pcs Stock]
- 500 pcs$0.51414
- Part Number:
- IPI90R800C3XKSA1
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 900V 6.9A TO-262.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - JFETs, Power Driver Modules, Transistors - FETs, MOSFETs - Single, Diodes - Rectifiers - Arrays, Transistors - Bipolar (BJT) - Arrays, Transistors - FETs, MOSFETs - RF, Transistors - Bipolar (BJT) - RF and Diodes - Zener - Single ...
- Competitive Advantage:
- We specialize in Infineon Technologies IPI90R800C3XKSA1 electronic components. IPI90R800C3XKSA1 can be shipped within 24 hours after order. If you have any demands for IPI90R800C3XKSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPI90R800C3XKSA1 Product Attributes
Part Number :
IPI90R800C3XKSA1
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 900V 6.9A TO-262
Series :
CoolMOS™
Part Status :
Obsolete
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
900V
Current - Continuous Drain (Id) @ 25°C :
6.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
800 mOhm @ 4.1A, 10V
Vgs(th) (Max) @ Id :
3.5V @ 460µA
Gate Charge (Qg) (Max) @ Vgs :
42nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1100pF @ 100V
FET Feature :
-
Power Dissipation (Max) :
104W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
PG-TO262-3
Package / Case :
TO-262-3 Long Leads, I²Pak, TO-262AA
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