Part Number :
GB01SLT12-252
Manufacturer :
GeneSiC Semiconductor
Description :
DIODE SILICON 1.2KV 1A TO252
Diode Type :
Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) :
1200V
Current - Average Rectified (Io) :
1A
Voltage - Forward (Vf) (Max) @ If :
1.8V @ 1A
Speed :
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) :
0ns
Current - Reverse Leakage @ Vr :
2µA @ 1200V
Capacitance @ Vr, F :
69pF @ 1V, 1MHz
Mounting Type :
Surface Mount
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package :
TO-252
Operating Temperature - Junction :
-55°C ~ 175°C