Vishay Siliconix - SI1012CR-T1-GE3

KEY Part #: K6417160

SI1012CR-T1-GE3 Pricing (USD) [817494pcs Stock]

  • 1 pcs$0.04525
  • 3,000 pcs$0.04307

Part Number:
SI1012CR-T1-GE3
Manufacturer:
Vishay Siliconix
Detailed description:
MOSFET N-CH 20V 0.63A SC-75A.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Single, Diodes - RF, Transistors - FETs, MOSFETs - Arrays, Thyristors - SCRs - Modules, Transistors - FETs, MOSFETs - RF, Transistors - Special Purpose, Transistors - JFETs and Thyristors - DIACs, SIDACs ...
Competitive Advantage:
We specialize in Vishay Siliconix SI1012CR-T1-GE3 electronic components. SI1012CR-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI1012CR-T1-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SI1012CR-T1-GE3 Product Attributes

Part Number : SI1012CR-T1-GE3
Manufacturer : Vishay Siliconix
Description : MOSFET N-CH 20V 0.63A SC-75A
Series : TrenchFET®
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : -
Drive Voltage (Max Rds On, Min Rds On) : 1.5V, 4.5V
Rds On (Max) @ Id, Vgs : 396 mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 2nC @ 8V
Vgs (Max) : ±8V
Input Capacitance (Ciss) (Max) @ Vds : 43pF @ 10V
FET Feature : -
Power Dissipation (Max) : 240mW (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SC-75A
Package / Case : SC-75, SOT-416

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