TK14E65W5,S1X Pricing (USD) [30662pcs Stock]
- 1 pcs$1.48075
- 50 pcs$1.19377
- 100 pcs$1.01929
- 500 pcs$0.79277
- 1,000 pcs$0.65687
- Part Number:
- TK14E65W5,S1X
- Manufacturer:
- Toshiba Semiconductor and Storage
- Detailed description:
- MOSFET N-CH 650V 13.7A TO-220AB.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - Single, Diodes - RF, Transistors - FETs, MOSFETs - Arrays, Transistors - Special Purpose, Transistors - IGBTs - Single, Thyristors - SCRs - Modules, Diodes - Bridge Rectifiers and Transistors - Bipolar (BJT) - Single, Pre-Biased ...
- Competitive Advantage:
- We specialize in Toshiba Semiconductor and Storage TK14E65W5,S1X electronic components. TK14E65W5,S1X can be shipped within 24 hours after order. If you have any demands for TK14E65W5,S1X, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK14E65W5,S1X Product Attributes
Part Number :
TK14E65W5,S1X
Manufacturer :
Toshiba Semiconductor and Storage
Description :
MOSFET N-CH 650V 13.7A TO-220AB
Series :
DTMOSIV
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
650V
Current - Continuous Drain (Id) @ 25°C :
13.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
300 mOhm @ 6.9A, 10V
Vgs(th) (Max) @ Id :
4.5V @ 690µA
Gate Charge (Qg) (Max) @ Vgs :
40nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
1300pF @ 300V
FET Feature :
-
Power Dissipation (Max) :
130W (Tc)
Operating Temperature :
150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-220
Package / Case :
TO-220-3
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