Cree/Wolfspeed - E3M0120090D

KEY Part #: K6398981

E3M0120090D Pricing (USD) [12304pcs Stock]

  • 1 pcs$3.34932

Part Number:
E3M0120090D
Manufacturer:
Cree/Wolfspeed
Detailed description:
E-SERIES 900V 120 MOHM G3 SIC.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - Arrays, Diodes - Zener - Arrays, Transistors - FETs, MOSFETs - Single, Transistors - Bipolar (BJT) - Single, Thyristors - SCRs - Modules, Thyristors - SCRs and Transistors - IGBTs - Modules ...
Competitive Advantage:
We specialize in Cree/Wolfspeed E3M0120090D electronic components. E3M0120090D can be shipped within 24 hours after order. If you have any demands for E3M0120090D, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

E3M0120090D Product Attributes

Part Number : E3M0120090D
Manufacturer : Cree/Wolfspeed
Description : E-SERIES 900V 120 MOHM G3 SIC
Series : Automotive, AEC-Q101, E
Part Status : Active
FET Type : N-Channel
Technology : SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) : 900V
Current - Continuous Drain (Id) @ 25°C : 23A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 15V
Rds On (Max) @ Id, Vgs : 155 mOhm @ 15A, 15V
Vgs(th) (Max) @ Id : 3.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs : 17.3nC @ 15V
Vgs (Max) : +18V, -8V
Input Capacitance (Ciss) (Max) @ Vds : 350pF @ 600V
FET Feature : -
Power Dissipation (Max) : 97W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-247-3
Package / Case : TO-247-3

You May Also Be Interested In
  • DN3545N3-G

    Microchip Technology

    MOSFET N-CH 450V 0.136A TO92-3.

  • VP2450N3-G

    Microchip Technology

    MOSFET P-CH 500V 0.1A TO92-3.

  • TP0620N3-G

    Microchip Technology

    MOSFET P-CH 200V 0.175A TO92-3.

  • TN0606N3-G

    Microchip Technology

    MOSFET N-CH 60V 500MA TO92-3.

  • VN2450N3-G

    Microchip Technology

    MOSFET N-CH 500V 0.2A TO92-3.

  • TK40A10N1,S4X

    Toshiba Semiconductor and Storage

    MOSFET N-CH 100V 40A TO-220.