Vishay Siliconix - SI1303DL-T1-GE3

KEY Part #: K6412828

[13311pcs Stock]


    Part Number:
    SI1303DL-T1-GE3
    Manufacturer:
    Vishay Siliconix
    Detailed description:
    MOSFET P-CH 20V 670MA SOT323-3.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Thyristors - TRIACs, Power Driver Modules, Transistors - FETs, MOSFETs - Single, Diodes - Zener - Single, Thyristors - SCRs, Transistors - Special Purpose and Transistors - JFETs ...
    Competitive Advantage:
    We specialize in Vishay Siliconix SI1303DL-T1-GE3 electronic components. SI1303DL-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI1303DL-T1-GE3, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    SI1303DL-T1-GE3 Product Attributes

    Part Number : SI1303DL-T1-GE3
    Manufacturer : Vishay Siliconix
    Description : MOSFET P-CH 20V 670MA SOT323-3
    Series : TrenchFET®
    Part Status : Obsolete
    FET Type : P-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 20V
    Current - Continuous Drain (Id) @ 25°C : 670mA (Ta)
    Drive Voltage (Max Rds On, Min Rds On) : 2.5V, 4.5V
    Rds On (Max) @ Id, Vgs : 430 mOhm @ 1A, 4.5V
    Vgs(th) (Max) @ Id : 1.4V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs : 2.2nC @ 4.5V
    Vgs (Max) : ±12V
    Input Capacitance (Ciss) (Max) @ Vds : -
    FET Feature : -
    Power Dissipation (Max) : 290mW (Ta)
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Surface Mount
    Supplier Device Package : SC-70-3
    Package / Case : SC-70, SOT-323

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