RQ3E100GNTB Pricing (USD) [674757pcs Stock]
- 1 pcs$0.06060
- 3,000 pcs$0.06030
- Part Number:
- RQ3E100GNTB
- Manufacturer:
- Rohm Semiconductor
- Detailed description:
- MOSFET N-CH 30V 10A 8-HSMT.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - SCRs, Transistors - Bipolar (BJT) - RF, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - Bridge Rectifiers, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - Bipolar (BJT) - Arrays and Diodes - Rectifiers - Arrays ...
- Competitive Advantage:
- We specialize in Rohm Semiconductor RQ3E100GNTB electronic components. RQ3E100GNTB can be shipped within 24 hours after order. If you have any demands for RQ3E100GNTB, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RQ3E100GNTB Product Attributes
Part Number :
RQ3E100GNTB
Manufacturer :
Rohm Semiconductor
Description :
MOSFET N-CH 30V 10A 8-HSMT
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
30V
Current - Continuous Drain (Id) @ 25°C :
10A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
11.7 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id :
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
7.9nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
420pF @ 15V
FET Feature :
-
Power Dissipation (Max) :
2W (Ta), 15W (Tc)
Operating Temperature :
150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
8-HSMT (3.2x3)
Package / Case :
8-PowerVDFN
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