Part Number :
RN1901FETE85LF
Manufacturer :
Toshiba Semiconductor and Storage
Description :
TRANS 2NPN PREBIAS 0.1W ES6
Transistor Type :
2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max) :
100mA
Voltage - Collector Emitter Breakdown (Max) :
50V
Resistor - Base (R1) :
4.7 kOhms
Resistor - Emitter Base (R2) :
4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce :
30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic :
300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) :
100nA (ICBO)
Frequency - Transition :
250MHz
Mounting Type :
Surface Mount
Package / Case :
SOT-563, SOT-666
Supplier Device Package :
ES6