IRFPE30PBF Pricing (USD) [15181pcs Stock]
- 1 pcs$2.71471
- 10 pcs$2.42385
- 100 pcs$1.98756
- 500 pcs$1.60944
- 1,000 pcs$1.35736
- Part Number:
- IRFPE30PBF
- Manufacturer:
- Vishay Siliconix
- Detailed description:
- MOSFET N-CH 800V 4.1A TO-247AC.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Transistors - Bipolar (BJT) - Arrays, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - FETs, MOSFETs - Single, Transistors - IGBTs - Single, Transistors - Programmable Unijunction, Transistors - FETs, MOSFETs - RF and Transistors - IGBTs - Modules ...
- Competitive Advantage:
- We specialize in Vishay Siliconix IRFPE30PBF electronic components. IRFPE30PBF can be shipped within 24 hours after order. If you have any demands for IRFPE30PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFPE30PBF Product Attributes
Part Number :
IRFPE30PBF
Manufacturer :
Vishay Siliconix
Description :
MOSFET N-CH 800V 4.1A TO-247AC
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
800V
Current - Continuous Drain (Id) @ 25°C :
4.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
3 Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
78nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1300pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
125W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-247-3
Package / Case :
TO-247-3
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