Vishay Siliconix - SI7956DP-T1-E3

KEY Part #: K6523088

SI7956DP-T1-E3 Pricing (USD) [52486pcs Stock]

  • 1 pcs$0.74498
  • 3,000 pcs$0.69732

Part Number:
SI7956DP-T1-E3
Manufacturer:
Vishay Siliconix
Detailed description:
MOSFET 2N-CH 150V 2.6A PPAK SO-8.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - RF, Transistors - JFETs, Diodes - Rectifiers - Single, Thyristors - SCRs - Modules, Transistors - IGBTs - Single, Power Driver Modules, Thyristors - SCRs and Transistors - Programmable Unijunction ...
Competitive Advantage:
We specialize in Vishay Siliconix SI7956DP-T1-E3 electronic components. SI7956DP-T1-E3 can be shipped within 24 hours after order. If you have any demands for SI7956DP-T1-E3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SI7956DP-T1-E3 Product Attributes

Part Number : SI7956DP-T1-E3
Manufacturer : Vishay Siliconix
Description : MOSFET 2N-CH 150V 2.6A PPAK SO-8
Series : TrenchFET®
Part Status : Active
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 150V
Current - Continuous Drain (Id) @ 25°C : 2.6A
Rds On (Max) @ Id, Vgs : 105 mOhm @ 4.1A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 26nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : -
Power - Max : 1.4W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : PowerPAK® SO-8 Dual
Supplier Device Package : PowerPAK® SO-8 Dual

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