[2483pcs Stock]
- Part Number:
- RQJ0303PGDQA#H6
- Manufacturer:
- Renesas Electronics America
- Detailed description:
- MOSFET P-CH 30V 3.3A 3MPAK.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Power Driver Modules, Transistors - Bipolar (BJT) - Single, Pre-Biased, Thyristors - SCRs - Modules, Diodes - RF, Transistors - IGBTs - Single, Transistors - JFETs, Diodes - Zener - Single and Diodes - Rectifiers - Arrays ...
- Competitive Advantage:
- We specialize in Renesas Electronics America RQJ0303PGDQA#H6 electronic components. RQJ0303PGDQA#H6 can be shipped within 24 hours after order. If you have any demands for RQJ0303PGDQA#H6, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RQJ0303PGDQA#H6 Product Attributes
Part Number :
RQJ0303PGDQA#H6
Manufacturer :
Renesas Electronics America
Description :
MOSFET P-CH 30V 3.3A 3MPAK
Series :
-
Part Status :
Active
FET Type :
P-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
30V
Current - Continuous Drain (Id) @ 25°C :
3.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
68 mOhm @ 1.6A, 10V
Vgs(th) (Max) @ Id :
-
Gate Charge (Qg) (Max) @ Vgs :
12nC @ 10V
Vgs (Max) :
+10V, -20V
Input Capacitance (Ciss) (Max) @ Vds :
625pF @ 10V
FET Feature :
-
Power Dissipation (Max) :
800mW (Ta)
Operating Temperature :
150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
3-MPAK
Package / Case :
TO-236-3, SC-59, SOT-23-3
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