BAS116LT1G Pricing (USD) [2081491pcs Stock]
- 1 pcs$0.01843
- 3,000 pcs$0.01834
- 6,000 pcs$0.01595
- 15,000 pcs$0.01355
- 30,000 pcs$0.01276
- 75,000 pcs$0.01196
- 150,000 pcs$0.01063
- Part Number:
- BAS116LT1G
- Manufacturer:
- ON Semiconductor
- Detailed description:
- DIODE GEN PURP 75V 200MA SOT23-3. Diodes - General Purpose, Power, Switching 75V 200mA
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - SCRs - Modules, Diodes - Rectifiers - Single, Transistors - Special Purpose, Transistors - IGBTs - Modules, Thyristors - SCRs, Diodes - Rectifiers - Arrays, Transistors - IGBTs - Arrays and Transistors - FETs, MOSFETs - Arrays ...
- Competitive Advantage:
- We specialize in ON Semiconductor BAS116LT1G electronic components. BAS116LT1G can be shipped within 24 hours after order. If you have any demands for BAS116LT1G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BAS116LT1G Product Attributes
Part Number :
BAS116LT1G
Manufacturer :
ON Semiconductor
Description :
DIODE GEN PURP 75V 200MA SOT23-3
Series :
-
Part Status :
Active
Diode Type :
Standard
Voltage - DC Reverse (Vr) (Max) :
75V
Current - Average Rectified (Io) :
200mA (DC)
Voltage - Forward (Vf) (Max) @ If :
1.25V @ 150mA
Speed :
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) :
3µs
Current - Reverse Leakage @ Vr :
5nA @ 75V
Capacitance @ Vr, F :
2pF @ 0V, 1MHz
Mounting Type :
Surface Mount
Package / Case :
TO-236-3, SC-59, SOT-23-3
Supplier Device Package :
SOT-23-3 (TO-236)
Operating Temperature - Junction :
-55°C ~ 150°C
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