Infineon Technologies - FF200R12KT3EHOSA1

KEY Part #: K6534493

FF200R12KT3EHOSA1 Pricing (USD) [883pcs Stock]

  • 1 pcs$52.58487

Part Number:
FF200R12KT3EHOSA1
Manufacturer:
Infineon Technologies
Detailed description:
IGBT MODULE VCES 1200V 200A.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Zener - Single, Transistors - Special Purpose, Transistors - Bipolar (BJT) - Single, Pre-Biased, Thyristors - SCRs, Diodes - Zener - Arrays, Diodes - RF, Transistors - IGBTs - Modules and Transistors - Bipolar (BJT) - Arrays ...
Competitive Advantage:
We specialize in Infineon Technologies FF200R12KT3EHOSA1 electronic components. FF200R12KT3EHOSA1 can be shipped within 24 hours after order. If you have any demands for FF200R12KT3EHOSA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FF200R12KT3EHOSA1 Product Attributes

Part Number : FF200R12KT3EHOSA1
Manufacturer : Infineon Technologies
Description : IGBT MODULE VCES 1200V 200A
Series : -
Part Status : Active
IGBT Type : -
Configuration : 2 Independent
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : -
Power - Max : 1050W
Vce(on) (Max) @ Vge, Ic : 2.15V @ 15V, 200A
Current - Collector Cutoff (Max) : 5mA
Input Capacitance (Cies) @ Vce : 14nF @ 25V
Input : Standard
NTC Thermistor : No
Operating Temperature : -40°C ~ 125°C
Mounting Type : Chassis Mount
Package / Case : Module
Supplier Device Package : Module

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