Infineon Technologies - IPD65R420CFDATMA1

KEY Part #: K6419352

IPD65R420CFDATMA1 Pricing (USD) [106812pcs Stock]

  • 1 pcs$0.34628
  • 2,500 pcs$0.31768

Part Number:
IPD65R420CFDATMA1
Manufacturer:
Infineon Technologies
Detailed description:
MOSFET N-CH 650V 8.7A TO252.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - Zener - Single, Transistors - Bipolar (BJT) - Single, Transistors - Bipolar (BJT) - Arrays, Power Driver Modules, Thyristors - TRIACs, Transistors - IGBTs - Arrays and Diodes - Variable Capacitance (Varicaps, Varactors) ...
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPD65R420CFDATMA1 Product Attributes

Part Number : IPD65R420CFDATMA1
Manufacturer : Infineon Technologies
Description : MOSFET N-CH 650V 8.7A TO252
Series : CoolMOS™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 650V
Current - Continuous Drain (Id) @ 25°C : 8.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 420 mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id : 4.5V @ 300µA
Gate Charge (Qg) (Max) @ Vgs : 31.5nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 870pF @ 100V
FET Feature : -
Power Dissipation (Max) : 83.3W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : PG-TO252-3
Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63

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