Diodes Incorporated - DMT3011LDT-7

KEY Part #: K6523107

DMT3011LDT-7 Pricing (USD) [231556pcs Stock]

  • 1 pcs$0.15973
  • 3,000 pcs$0.14194

Part Number:
DMT3011LDT-7
Manufacturer:
Diodes Incorporated
Detailed description:
MOSFET 2N-CH 30V 8A V-DFN3030-8.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - Programmable Unijunction, Transistors - Bipolar (BJT) - Arrays, Thyristors - SCRs, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Thyristors - TRIACs, Diodes - RF and Transistors - FETs, MOSFETs - RF ...
Competitive Advantage:
We specialize in Diodes Incorporated DMT3011LDT-7 electronic components. DMT3011LDT-7 can be shipped within 24 hours after order. If you have any demands for DMT3011LDT-7, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMT3011LDT-7 Product Attributes

Part Number : DMT3011LDT-7
Manufacturer : Diodes Incorporated
Description : MOSFET 2N-CH 30V 8A V-DFN3030-8
Series : -
Part Status : Active
FET Type : 2 N-Channel (Dual) Asymmetrical
FET Feature : Standard
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 8A, 10.7A
Rds On (Max) @ Id, Vgs : 20 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id : 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 13.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 641pF @ 15V
Power - Max : 1.9W
Operating Temperature : -55°C ~ 155°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-VDFN Exposed Pad
Supplier Device Package : V-DFN3030-8 (Type K)

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