RN2706JE(TE85L,F) Pricing (USD) [2064pcs Stock]
- 1 pcs$0.11469
- 10 pcs$0.10362
- 25 pcs$0.07451
- 100 pcs$0.05798
- Part Number:
- RN2706JE(TE85L,F)
- Manufacturer:
- Toshiba Semiconductor and Storage
- Detailed description:
- TRANS 2PNP PREBIAS 0.1W ESV.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Single, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - Zener - Single, Diodes - Bridge Rectifiers, Diodes - Zener - Arrays, Transistors - FETs, MOSFETs - RF, Transistors - Bipolar (BJT) - Single, Pre-Biased and Transistors - Programmable Unijunction ...
- Competitive Advantage:
- We specialize in Toshiba Semiconductor and Storage RN2706JE(TE85L,F) electronic components. RN2706JE(TE85L,F) can be shipped within 24 hours after order. If you have any demands for RN2706JE(TE85L,F), Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RN2706JE(TE85L,F) Product Attributes
Part Number :
RN2706JE(TE85L,F)
Manufacturer :
Toshiba Semiconductor and Storage
Description :
TRANS 2PNP PREBIAS 0.1W ESV
Series :
-
Part Status :
Discontinued at Digi-Key
Transistor Type :
2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Current - Collector (Ic) (Max) :
100mA
Voltage - Collector Emitter Breakdown (Max) :
50V
Resistor - Base (R1) :
4.7 kOhms
Resistor - Emitter Base (R2) :
47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce :
80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic :
300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) :
100nA (ICBO)
Frequency - Transition :
200MHz
Power - Max :
100mW
Mounting Type :
Surface Mount
Package / Case :
SOT-553
Supplier Device Package :
ESV
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