Infineon Technologies - FF600R12ME4CBOSA1

KEY Part #: K6532669

FF600R12ME4CBOSA1 Pricing (USD) [369pcs Stock]

  • 1 pcs$125.61261

Part Number:
FF600R12ME4CBOSA1
Manufacturer:
Infineon Technologies
Detailed description:
IGBT MODULE 1200V 600A.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - Bipolar (BJT) - Arrays, Thyristors - SCRs, Transistors - IGBTs - Single, Transistors - IGBTs - Modules, Thyristors - DIACs, SIDACs, Thyristors - SCRs - Modules and Transistors - FETs, MOSFETs - Arrays ...
Competitive Advantage:
We specialize in Infineon Technologies FF600R12ME4CBOSA1 electronic components. FF600R12ME4CBOSA1 can be shipped within 24 hours after order. If you have any demands for FF600R12ME4CBOSA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FF600R12ME4CBOSA1 Product Attributes

Part Number : FF600R12ME4CBOSA1
Manufacturer : Infineon Technologies
Description : IGBT MODULE 1200V 600A
Series : -
Part Status : Active
IGBT Type : Trench Field Stop
Configuration : Half Bridge
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 1060A
Power - Max : 4050W
Vce(on) (Max) @ Vge, Ic : 2.1V @ 15V, 600A
Current - Collector Cutoff (Max) : 3mA
Input Capacitance (Cies) @ Vce : 37nF @ 25V
Input : Standard
NTC Thermistor : Yes
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Chassis Mount
Package / Case : Module
Supplier Device Package : Module

You May Also Be Interested In
  • VS-ETF150Y65N

    Vishay Semiconductor Diodes Division

    IGBT 650V 150A EMIPAK-2B.

  • CPV363M4K

    Vishay Semiconductor Diodes Division

    IGBT SIP MODULE 600V 6A IMS-2.

  • CPV362M4K

    Vishay Semiconductor Diodes Division

    IGBT SIP MODULE 600V 31 IMS-2.

  • CPV362M4U

    Vishay Semiconductor Diodes Division

    IGBT SIP MODULE 600V 3.9A IMS-2.

  • CPV363M4U

    Vishay Semiconductor Diodes Division

    IGBT SIP MODULE 600V 6.8A IMS-2.

  • A2C25S12M3-F

    STMicroelectronics

    IGBT TRENCH 1200V 25A ACEPACK2.