Toshiba Semiconductor and Storage - RN2962FE(TE85L,F)

KEY Part #: K6529765

[2056pcs Stock]


    Part Number:
    RN2962FE(TE85L,F)
    Manufacturer:
    Toshiba Semiconductor and Storage
    Detailed description:
    TRANS 2PNP PREBIAS 0.1W ES6.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Modules, Diodes - Bridge Rectifiers, Thyristors - SCRs, Diodes - RF, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - Rectifiers - Single, Transistors - FETs, MOSFETs - Arrays and Transistors - Bipolar (BJT) - Arrays ...
    Competitive Advantage:
    We specialize in Toshiba Semiconductor and Storage RN2962FE(TE85L,F) electronic components. RN2962FE(TE85L,F) can be shipped within 24 hours after order. If you have any demands for RN2962FE(TE85L,F), Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    RN2962FE(TE85L,F) Product Attributes

    Part Number : RN2962FE(TE85L,F)
    Manufacturer : Toshiba Semiconductor and Storage
    Description : TRANS 2PNP PREBIAS 0.1W ES6
    Series : -
    Part Status : Obsolete
    Transistor Type : 2 PNP - Pre-Biased (Dual)
    Current - Collector (Ic) (Max) : 100mA
    Voltage - Collector Emitter Breakdown (Max) : 50V
    Resistor - Base (R1) : 10 kOhms
    Resistor - Emitter Base (R2) : 1 kOhms
    DC Current Gain (hFE) (Min) @ Ic, Vce : 50 @ 10mA, 5V
    Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
    Current - Collector Cutoff (Max) : 100nA (ICBO)
    Frequency - Transition : 200MHz
    Power - Max : 100mW
    Mounting Type : Surface Mount
    Package / Case : SOT-563, SOT-666
    Supplier Device Package : ES6

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