IDP08E65D2XKSA1 Pricing (USD) [59949pcs Stock]
- 1 pcs$0.44737
- 10 pcs$0.39887
- 100 pcs$0.29417
- 500 pcs$0.24302
- 1,000 pcs$0.19186
- Part Number:
- IDP08E65D2XKSA1
- Manufacturer:
- Infineon Technologies
- Detailed description:
- DIODE GEN PURP 650V 8A TO220-2. Diodes - General Purpose, Power, Switching IGBT PRODUCTS
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - Arrays, Diodes - RF, Transistors - Bipolar (BJT) - RF, Transistors - FETs, MOSFETs - Single, Diodes - Bridge Rectifiers, Diodes - Zener - Arrays, Transistors - Programmable Unijunction and Power Driver Modules ...
- Competitive Advantage:
- We specialize in Infineon Technologies IDP08E65D2XKSA1 electronic components. IDP08E65D2XKSA1 can be shipped within 24 hours after order. If you have any demands for IDP08E65D2XKSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IDP08E65D2XKSA1 Product Attributes
Part Number :
IDP08E65D2XKSA1
Manufacturer :
Infineon Technologies
Description :
DIODE GEN PURP 650V 8A TO220-2
Series :
-
Part Status :
Active
Diode Type :
Standard
Voltage - DC Reverse (Vr) (Max) :
650V
Current - Average Rectified (Io) :
8A
Voltage - Forward (Vf) (Max) @ If :
2.3V @ 3A
Speed :
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) :
40ns
Current - Reverse Leakage @ Vr :
40µA @ 650V
Capacitance @ Vr, F :
-
Mounting Type :
Through Hole
Package / Case :
TO-220-2
Supplier Device Package :
TO-220-2
Operating Temperature - Junction :
-40°C ~ 175°C
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