IPL65R660E6AUMA1 Pricing (USD) [2912pcs Stock]
- 3,000 pcs$0.29583
- Part Number:
- IPL65R660E6AUMA1
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 4VSON.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Special Purpose, Thyristors - SCRs, Transistors - JFETs, Transistors - Bipolar (BJT) - RF, Power Driver Modules, Thyristors - DIACs, SIDACs, Transistors - FETs, MOSFETs - RF and Diodes - Rectifiers - Single ...
- Competitive Advantage:
- We specialize in Infineon Technologies IPL65R660E6AUMA1 electronic components. IPL65R660E6AUMA1 can be shipped within 24 hours after order. If you have any demands for IPL65R660E6AUMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPL65R660E6AUMA1 Product Attributes
Part Number :
IPL65R660E6AUMA1
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 4VSON
Series :
CoolMOS™ E6
Part Status :
Obsolete
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
650V
Current - Continuous Drain (Id) @ 25°C :
7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
660 mOhm @ 2.1A, 10V
Vgs(th) (Max) @ Id :
3.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs :
23nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
440pF @ 100V
FET Feature :
-
Power Dissipation (Max) :
63W (Tc)
Operating Temperature :
-40°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
Thin-Pak (8x8)
Package / Case :
4-PowerTSFN
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