IXYS - IXFA12N65X2

KEY Part #: K6394860

IXFA12N65X2 Pricing (USD) [39211pcs Stock]

  • 1 pcs$0.99717

Part Number:
IXFA12N65X2
Manufacturer:
IXYS
Detailed description:
MOSFET N-CH.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - JFETs, Transistors - Bipolar (BJT) - Arrays, Diodes - Variable Capacitance (Varicaps, Varactors), Diodes - Bridge Rectifiers, Diodes - RF, Diodes - Rectifiers - Single, Transistors - Bipolar (BJT) - Single, Pre-Biased and Transistors - FETs, MOSFETs - Arrays ...
Competitive Advantage:
We specialize in IXYS IXFA12N65X2 electronic components. IXFA12N65X2 can be shipped within 24 hours after order. If you have any demands for IXFA12N65X2, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXFA12N65X2 Product Attributes

Part Number : IXFA12N65X2
Manufacturer : IXYS
Description : MOSFET N-CH
Series : HiPerFET™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 650V
Current - Continuous Drain (Id) @ 25°C : 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 310 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id : 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 18.5nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 1134pF @ 25V
FET Feature : -
Power Dissipation (Max) : 180W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : TO-263AA
Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB