Vishay Siliconix - IRF610PBF

KEY Part #: K6415301

IRF610PBF Pricing (USD) [111333pcs Stock]

  • 1 pcs$0.29267
  • 10 pcs$0.25589
  • 100 pcs$0.19735
  • 500 pcs$0.14618
  • 1,000 pcs$0.11694

Part Number:
IRF610PBF
Manufacturer:
Vishay Siliconix
Detailed description:
MOSFET N-CH 200V 3.3A TO-220AB.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Bridge Rectifiers, Thyristors - TRIACs, Diodes - Zener - Single, Power Driver Modules, Diodes - Zener - Arrays, Transistors - IGBTs - Arrays and Transistors - IGBTs - Modules ...
Competitive Advantage:
We specialize in Vishay Siliconix IRF610PBF electronic components. IRF610PBF can be shipped within 24 hours after order. If you have any demands for IRF610PBF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRF610PBF Product Attributes

Part Number : IRF610PBF
Manufacturer : Vishay Siliconix
Description : MOSFET N-CH 200V 3.3A TO-220AB
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 200V
Current - Continuous Drain (Id) @ 25°C : 3.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 1.5 Ohm @ 2A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 8.2nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 140pF @ 25V
FET Feature : -
Power Dissipation (Max) : 36W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220AB
Package / Case : TO-220-3